PART |
Description |
Maker |
HYB25D256161CE-4.0 HYB25D256161CE-5.0 |
Specialty DRAMs - 250MHz (16Mx16) Specialty DRAMs - 200MHz (16Mx16)
|
Infineon
|
P13B16212A P13B16212V M464S3254DTS PC133 M464S3254 |
Protective Eyeglasses RoHS Compliant: NA Personal protection, Spectacles; RoHS Compliant: NA Electrically Conductive Floor Mat 1/8 inch x 4 feet x 8 feet RoHS Compliant: NA 32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD 32Mx64 SDRAM SODIMM based on 16Mx16 4Banks 8K Refresh3.3V Synchronous DRAMs with SPD
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HY57V56162 HY57V561620CT HY57V561620CT-H |
4 Banks x 4M x 16Bit Synchronous DRAM 16Mx16|3.3V|8K|6/K/H/8/P/S|SDRSDRAM-256M
|
HYNIX
|
M464S1654DTS |
16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
M366S1654CTS-L7A M366S1654CTS-L7C M366S1654CTS-C7A |
16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HY5DU56822AF HY5DU56422AF-J HY5DU561622AF HY5DU564 |
32M X 8 DDR DRAM, 0.7 ns, PBGA60 DDR SDRAM - 256Mb 64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M 16Mx16|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
|
HYNIX SEMICONDUCTOR INC
|
HYB39S256160DCL-6 HYB39S256800DCL-6 HYB39S256800DC |
Polypropylene metallized tape wrap and epoxy filled - Snubber 256兆位同步DRAM 256 MBit Synchronous DRAM 256兆位同步DRAM 256M (16Mx16) PC133 3-3-3 256Mb (32Mx8) FBGA PC133 3-3-3 256Mb (16Mx16) FBGA PC133 3-3-3 256Mb (64Mx4) PC133 3-3-3 256Mb (64Mx4) FBGA PC133 3-3-3 256 MBit Synchronous DRAM
|
Infineon Technologies AG Infineon Technologies A...
|
HM5425801B |
256M SSTL_2 interface DDR SDRAM(256M SSTL_2接口 DDR 同步DRAM) 256M DDR SDRAM的接口SSTL_256M SSTL_2接口的DDR同步DRAM)的
|
Hitachi,Ltd.
|
K9K2G16Q0M-Y K9K2G16Q0M-P K9K2G08U0M-F K9K2G08Q0M- |
SSR H/S IO 230V 20A 4-32VDC SSR H/S ZS 600V 70A 4-32VDC 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory 256M × 8 128M的16位NAND闪存 ULTRA2 LVD SCSI INTERNAL CBL 3 256M × 8 128M的16位NAND闪存 DSUB 25 M PCR/A G
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
AT88SC0404CA-MJ88SC0404 AT88SC0404CA-MP88SC0404 AT |
SPECIALTY MEMORY CIRCUIT, QMA SPECIALTY MEMORY CIRCUIT, DMA SPECIALTY MEMORY CIRCUIT WAFER SPECIALTY MEMORY CIRCUIT, PDIP8 GREEN, PLASTIC, PDIP-8 SPECIALTY MEMORY CIRCUIT, PTSO8 4.40 MM, GREEN, PLASTIC, TSSOP-8
|
Atmel, Corp. ATMEL CORP
|
AT88SC0204CA-MP88SC0204 AT88SC0204CA-WI88SC0204 AT |
SPECIALTY MEMORY CIRCUIT, DMA SPECIALTY MEMORY CIRCUIT WAFER SPECIALTY MEMORY CIRCUIT, PTSO8 4.40 MM, GREEN, PLASTIC, TSSOP-8 SPECIALTY MEMORY CIRCUIT, PDSO8 GREEN, PLASTIC, SOIC-8 SPECIALTY MEMORY CIRCUIT, QMA
|
Atmel, Corp. ATMEL CORP
|
CAT25C081PI-17 CAT25C321PI-17 CAT25C041PI-17 CAT25 |
SPECIALTY MICROPROCESSOR CIRCUIT, PDIP8 PLASTIC, DIP-8 SPECIALTY MICROPROCESSOR CIRCUIT, PDSO16 SPECIALTY MICROPROCESSOR CIRCUIT, PDSO14 SPECIALTY MICROPROCESSOR CIRCUIT, PDSO8
|
SunLED Co., Ltd.
|